类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 9.4A (Ta), 98A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 9.5mOhm @ 13A, 10V |
vgs(th) (最大值) @ id: | 3.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 71 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 3000 pF @ 50 V |
场效应管特征: | - |
功耗(最大值): | 1.2W (Ta), 139W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerDI5060-8 |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRFZ44ESTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 48A D2PAK |
|
PSMN8R5-40MSDXNexperia |
MOSFET N-CH 40V 60A LFPAK33 |
|
STD105N10F7AGSTMicroelectronics |
MOSFET N-CH 100V 80A DPAK |
|
MCQ4406-TPMicro Commercial Components (MCC) |
MOSFET N-CH 30V 10A 8SOP |
|
TSM60NB380CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 9.5A TO251 |
|
IRFZ14PBF-BE3Vishay / Siliconix |
MOSFET N-CH 60V 10A TO220AB |
|
IPD65R600C6BTMA1Rochester Electronics |
COOLMOS N-CHANNEL POWER MOSFET |
|
IRFU5305PBFIR (Infineon Technologies) |
MOSFET P-CH 55V 31A IPAK |
|
IPB020N10N5LFATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 120A TO263-3 |
|
FDB2614Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 62A D2PAK |
|
SI7370ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 50A PPAK SO-8 |
|
SI4435DDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 11.4A 8SO |
|
STL6N2VH5STMicroelectronics |
MOSFET N-CH 20V POWERFLAT |