English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™-5 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 2mOhm @ 100A, 10V |
| vgs(th) (最大值) @ id: | 4.1V @ 270µA |
| 栅极电荷 (qg) (max) @ vgs: | 195 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 840 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 313W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TO263-3 |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDB2614Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 62A D2PAK |
|
SI7370ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 50A PPAK SO-8 |
|
SI4435DDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 11.4A 8SO |
|
STL6N2VH5STMicroelectronics |
MOSFET N-CH 20V POWERFLAT |
|
AOT296LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 9.5A/70A TO220 |
|
NDS336PRochester Electronics |
MOSFET P-CH 20V 1.2A SUPERSOT3 |
|
CSD18503Q5ATexas Instruments |
MOSFET N-CH 40V 19A/100A 8VSON |
|
HUF76609D3STSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 10A TO252AA |
|
FQI1P50TURochester Electronics |
MOSFET P-CH 500V 1.5A I2PAK |
|
AUIRFR3607TRLRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
UF3C120040K3SUnitedSiC |
SICFET N-CH 1200V 65A TO247-3 |
|
IRFR321Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
TPN3R704PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 80A 8TSON |
