English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | FRFET®, SupreMOS® |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 550A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.6mOhm @ 100A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 595 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 40000 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1250W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-264 (IXTK) |
| 包/箱: | TO-264-3, TO-264AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI1032X-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 200MA SC89-3 |
|
FQP9N15Rochester Electronics |
MOSFET N-CH 150V 9A TO220-3 |
|
IPAN50R500CEXKSA1IR (Infineon Technologies) |
MOSFET N-CH 500V 11.1A TO220 |
|
PSMN7R0-100ES,127Rochester Electronics |
MOSFET N-CH 100V 100A I2PAK |
|
IPW50R250CPFKSA1Rochester Electronics |
MOSFET N-CH 500V 13A TO247-3 |
|
IPP029N06NAKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 24A/100A TO220-3 |
|
NTMFS4854NST3GRochester Electronics |
MOSFET N-CH 25V 15.2A/149A SO8FL |
|
APT1204R7BFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 3.5A TO247 |
|
3N163 DIELinear Integrated Systems, Inc. |
P-CHANNEL, SINGLE ENHANCEMENT MO |
|
FDB38N30USanyo Semiconductor/ON Semiconductor |
MOSFET N CH 300V 38A D2PAK |
|
FKI10531Sanken Electric Co., Ltd. |
MOSFET N-CH 100V 18A TO220F |
|
2SK3747-1ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 1500V 2A TO3PF-3 |
|
DMP2023UFDF-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 7.6A 6UDFN |
