English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 17A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 5.9mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 2.2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 18.2 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1113 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.1W (Ta), 31W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-WDFN (3.3x3.3) |
| 包/箱: | 8-PowerWDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SPA17N80C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 17A TO220-3 |
|
FQP4N20LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 3.8A TO220-3 |
|
NTP65N02RRochester Electronics |
MOSFET N-CH 25V 7.6A/58A TO220AB |
|
IPA80R1K2P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 4.5A TO220 |
|
NTD5862NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 98A DPAK |
|
IRFBC40ASPBFVishay / Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
|
BSC146N10LS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 44A TDSON-8-6 |
|
DMTH43M8LK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CHANNEL 40V 100A TO252 |
|
PSMN2R0-60ES,127Rochester Electronics |
ELEMENT, NCHANNEL, SILICON, MOSF |
|
NDD60N900U1-35GRochester Electronics |
MOSFET N-CH 600V 5.7A IPAK |
|
IRFS4010TRL7PPIR (Infineon Technologies) |
MOSFET N-CH 100V 190A D2PAK |
|
IPB180P04P403ATMA2IR (Infineon Technologies) |
MOSFET P-CH 40V 180A TO263-7 |
|
IPP80N08S2L07AKSA1IR (Infineon Technologies) |
MOSFET N-CH 75V 80A TO220-3 |
