类型 | 描述 |
---|---|
系列: | OptiMOS™ 5 |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 44A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 14.6mOhm @ 22A, 10V |
vgs(th) (最大值) @ id: | 2.3V @ 23µA |
栅极电荷 (qg) (max) @ vgs: | 10 nC @ 4.5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1300 pF @ 50 V |
场效应管特征: | - |
功耗(最大值): | 2.5W (Ta), 52W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PG-TDSON-8-6 |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMTH43M8LK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CHANNEL 40V 100A TO252 |
|
PSMN2R0-60ES,127Rochester Electronics |
ELEMENT, NCHANNEL, SILICON, MOSF |
|
NDD60N900U1-35GRochester Electronics |
MOSFET N-CH 600V 5.7A IPAK |
|
IRFS4010TRL7PPIR (Infineon Technologies) |
MOSFET N-CH 100V 190A D2PAK |
|
IPB180P04P403ATMA2IR (Infineon Technologies) |
MOSFET P-CH 40V 180A TO263-7 |
|
IPP80N08S2L07AKSA1IR (Infineon Technologies) |
MOSFET N-CH 75V 80A TO220-3 |
|
SI8821EDB-T2-E1Vishay / Siliconix |
MOSFET P-CH 30V 4MICROFOOT |
|
AON7405Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 25A/50A 8DFN |
|
BSC042N03LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 20A/93A TDSON |
|
FDMC86265PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 150V 1A/1.8A 8MLP |
|
STW11NK100ZSTMicroelectronics |
MOSFET N-CH 1000V 8.3A TO247-3 |
|
STB7NK80ZT4STMicroelectronics |
MOSFET N-CH 800V 5.2A D2PAK |
|
SSM3J328R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 6A SOT23F |