English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5.7A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 900mOhm @ 2.5A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 12 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 360 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 74W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I-PAK |
| 包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFS4010TRL7PPIR (Infineon Technologies) |
MOSFET N-CH 100V 190A D2PAK |
|
IPB180P04P403ATMA2IR (Infineon Technologies) |
MOSFET P-CH 40V 180A TO263-7 |
|
IPP80N08S2L07AKSA1IR (Infineon Technologies) |
MOSFET N-CH 75V 80A TO220-3 |
|
SI8821EDB-T2-E1Vishay / Siliconix |
MOSFET P-CH 30V 4MICROFOOT |
|
AON7405Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 25A/50A 8DFN |
|
BSC042N03LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 20A/93A TDSON |
|
FDMC86265PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 150V 1A/1.8A 8MLP |
|
STW11NK100ZSTMicroelectronics |
MOSFET N-CH 1000V 8.3A TO247-3 |
|
STB7NK80ZT4STMicroelectronics |
MOSFET N-CH 800V 5.2A D2PAK |
|
SSM3J328R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 6A SOT23F |
|
STWA40N90K5STMicroelectronics |
MOSFET N-CH 900V 40A TO247 |
|
IXFH12N120PWickmann / Littelfuse |
MOSFET N-CH 1200V 12A TO247AD |
|
RFD14N05SM9ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 14A TO252AA |
