类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Last Time Buy |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 25A (Ta), 50A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 6.2mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 2.8V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 51 nC @ 10 V |
vgs (最大值): | ±25V |
输入电容 (ciss) (max) @ vds: | 2940 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 6.25W (Ta), 83W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-DFN-EP (3.3x3.3) |
包/箱: | 8-PowerWDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BSC042N03LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 20A/93A TDSON |
|
FDMC86265PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 150V 1A/1.8A 8MLP |
|
STW11NK100ZSTMicroelectronics |
MOSFET N-CH 1000V 8.3A TO247-3 |
|
STB7NK80ZT4STMicroelectronics |
MOSFET N-CH 800V 5.2A D2PAK |
|
SSM3J328R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 6A SOT23F |
|
STWA40N90K5STMicroelectronics |
MOSFET N-CH 900V 40A TO247 |
|
IXFH12N120PWickmann / Littelfuse |
MOSFET N-CH 1200V 12A TO247AD |
|
RFD14N05SM9ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 14A TO252AA |
|
IPB65R380C6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF530STRRPBFVishay / Siliconix |
MOSFET N-CH 100V 14A TO263 |
|
FDV045P20LSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 1.15A SOT23-3 |
|
IAUC80N04S6L032ATMA1IR (Infineon Technologies) |
IAUC80N04S6L032ATMA1 |
|
IPW60R120P7Rochester Electronics |
N-CHANNEL POWER MOSFET |