English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 50 V |
| 电流 - 连续漏极 (id) @ 25°c: | 14A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 100mOhm @ 14A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 40 nC @ 20 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 570 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 48W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-252AA |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPB65R380C6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF530STRRPBFVishay / Siliconix |
MOSFET N-CH 100V 14A TO263 |
|
FDV045P20LSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 1.15A SOT23-3 |
|
IAUC80N04S6L032ATMA1IR (Infineon Technologies) |
IAUC80N04S6L032ATMA1 |
|
IPW60R120P7Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDMC2512SDCRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 3 |
|
SQM60030E_GE3Vishay / Siliconix |
MOSFET N-CH 80V 120A D2PAK |
|
BSS138-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 220MA SOT23 |
|
FDG410NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 2.2A SC88 |
|
DMN3020UFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 15A 6UDFN |
|
IRF7204PBFRochester Electronics |
MOSFET P-CH 20V 5.3A 8SO |
|
IXTA08N100D2Wickmann / Littelfuse |
MOSFET N-CH 1000V 800MA TO263 |
|
IPU80R600P7AKMA1Rochester Electronics |
MOSFET N-CH 800V 8A TO251-3 |
