RES 261K OHM 0.6W 0.5% AXIAL
MOSFET N-CH 150V 33A POWERFLAT
IC FLASH 8MBIT SPI 104MHZ 8SOIC
类型 | 描述 |
---|---|
系列: | STripFET™ III |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 150 V |
电流 - 连续漏极 (id) @ 25°c: | 33A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 40mOhm @ 3.5A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 49.4 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1905 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 80W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerFlat™ (5x6) |
包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RSF010P05TLROHM Semiconductor |
MOSFET P-CH 45V 1A TUMT3 |
|
IRF540STRLPBFVishay / Siliconix |
MOSFET N-CH 100V 28A D2PAK |
|
IRF200S234IR (Infineon Technologies) |
MOSFET N-CH 200V 90A D2PAK |
|
NTMFS4C06NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11A/69A 5DFN |
|
NTTFS5C460NLTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N CH 40V 19A/74A 8WDFN |
|
IRFS3607TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 80A D2PAK |
|
IPD50N04S308ATMA1Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
FDMS86104Rochester Electronics |
N-CHANNEL SHIELDED GATE POWERTRE |
|
RSD160P05TLROHM Semiconductor |
MOSFET P-CH 45V 16A CPT3 |
|
AOB1404LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 15A/220A TO263 |
|
IPW50R190CEFKSA1Rochester Electronics |
MOSFET N-CH 500V 18.5A TO247-3 |
|
TK12A60D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 12A TO220SIS |
|
IRFL4315TRPBFIR (Infineon Technologies) |
MOSFET N-CH 150V 2.6A SOT223 |