







PANEL MOUNT YELLOW CONTINUOUS OU
MOSFET N-CH 1000V 4A TO220AB
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™ |
| 包裹: | Tube |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 1000 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 10V |
| rds on (max) @ id, vgs: | 3Ohm @ 2A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 1.5mA |
| 栅极电荷 (qg) (max) @ vgs: | 39 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1050 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 150W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
RM11N800TIRectron USA |
MOSFET N-CHANNEL 800V 11A TO220F |
|
|
STL33N60DM2STMicroelectronics |
MOSFET N-CH 600V 21A PWRFLAT HV |
|
|
IRF620STRRPBFVishay / Siliconix |
MOSFET N-CH 200V 5.2A D2PAK |
|
|
SUM70060E-GE3Vishay / Siliconix |
MOSFET N-CH 100V 131A TO263 |
|
|
IPAN60R360PFD7SXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 10A TO220 |
|
|
IRFBF20STRLPBFVishay / Siliconix |
MOSFET N-CH 900V 1.7A D2PAK |
|
|
SPD03N60S5XTRochester Electronics |
SPD03N60 - 600V COOLMOS N-CHANNE |
|
|
FDMS86105Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 6A/26A 8PQFN |
|
|
DMN6075S-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 2A SOT23 |
|
|
IPP80N04S2L03AKSA1Rochester Electronics |
MOSFET N-CH 40V 80A TO220-3 |
|
|
IRFB7437PBFIR (Infineon Technologies) |
MOSFET N-CH 40V 195A TO220AB |
|
|
SSM3H137TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 34V 2A UFM |
|
|
ATP108-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 70A ATPAK |