English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | ThunderFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 131A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 7.5V, 10V |
| rds on (max) @ id, vgs: | 5.6mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 81 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3330 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 375W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-263 (D2Pak) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPAN60R360PFD7SXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 10A TO220 |
|
IRFBF20STRLPBFVishay / Siliconix |
MOSFET N-CH 900V 1.7A D2PAK |
|
SPD03N60S5XTRochester Electronics |
SPD03N60 - 600V COOLMOS N-CHANNE |
|
FDMS86105Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 6A/26A 8PQFN |
|
DMN6075S-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 2A SOT23 |
|
IPP80N04S2L03AKSA1Rochester Electronics |
MOSFET N-CH 40V 80A TO220-3 |
|
IRFB7437PBFIR (Infineon Technologies) |
MOSFET N-CH 40V 195A TO220AB |
|
SSM3H137TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 34V 2A UFM |
|
ATP108-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 70A ATPAK |
|
IRLR8743TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 160A DPAK |
|
IRLR3717PBFRochester Electronics |
MOSFET N-CH 20V 120A DPAK |
|
CSD22205LTTexas Instruments |
MOSFET P-CH 8V 7.4A 4PICOSTAR |
|
FDMC8026SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 19A/21A 8MLP |
