







MOSFET N-CH 30V 160A DPAK
RECTIFIER, 0.3A, 75V
SENSOR 15PSIS 1/8 NPT 5V
SENSOR 1500PSI M12-1.5 6G 4.5V
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 160A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
| rds on (max) @ id, vgs: | 3.1mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 2.35V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 59 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4880 pF @ 15 V |
| 场效应管特征: | - |
| 功耗(最大值): | 135W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IRLR3717PBFRochester Electronics |
MOSFET N-CH 20V 120A DPAK |
|
|
CSD22205LTTexas Instruments |
MOSFET P-CH 8V 7.4A 4PICOSTAR |
|
|
FDMC8026SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 19A/21A 8MLP |
|
|
SPD08N05LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
NP109N04PUK-E1-AYRenesas Electronics America |
MOSFET N-CH 40V 110A TO263 |
|
|
TK20N60W5,S1VFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 20A TO247 |
|
|
RM2P60S2Rectron USA |
MOSFET P-CHANNEL 60V 1.9A SOT23 |
|
|
DMP3007SFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 70A POWERDI3333 |
|
|
PMPB20XPEAXNexperia |
MOSFET P-CH 20V 7.2A DFN2020MD-6 |
|
|
SCH2825-TL-ERochester Electronics |
MOSFET N-CH 30V 1.6A 6SCH |
|
|
IPN70R900P7SATMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 6A SOT223 |
|
|
FCH023N65S3-F155Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 75A TO247 |
|
|
NTLTS3107PR2GRochester Electronics |
MOSFET P-CH 20V 5.9A 8DFN |