类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NP109N04PUK-E1-AYRenesas Electronics America |
MOSFET N-CH 40V 110A TO263 |
|
TK20N60W5,S1VFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 20A TO247 |
|
RM2P60S2Rectron USA |
MOSFET P-CHANNEL 60V 1.9A SOT23 |
|
DMP3007SFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 70A POWERDI3333 |
|
PMPB20XPEAXNexperia |
MOSFET P-CH 20V 7.2A DFN2020MD-6 |
|
SCH2825-TL-ERochester Electronics |
MOSFET N-CH 30V 1.6A 6SCH |
|
IPN70R900P7SATMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 6A SOT223 |
|
FCH023N65S3-F155Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 75A TO247 |
|
NTLTS3107PR2GRochester Electronics |
MOSFET P-CH 20V 5.9A 8DFN |
|
SI7108DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 14A PPAK1212-8 |
|
IPDD60R075CFD7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 40A HDSOP-10 |
|
IRFS4127PBFRochester Electronics |
HEXFET POWER MOSFET |
|
STFI260N6F6STMicroelectronics |
MOSFET N-CH 60V 80A I2PAKFP |