English
简体中文
MOSFET N-CH 60V 15.8A/39.3A PPAK
MOSFET N-CH 90V 2A TO92-3
IC MCU 8BIT 32KB FLASH 68QFN
SENSOR PHOTO NPN TH
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 15.8A (Ta), 39.3A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 7.2mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 30 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1235 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.6W (Ta), 22.3W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® SO-8 |
| 包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BSR315PH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 60V 620MA SC59 |
|
DMN62D1LFD-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 400MA 3DFN |
|
IRLR8726TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 86A DPAK |
|
IPD30N08S2L21ATMA1Rochester Electronics |
IPD30N08 - 75V-100V N-CHANNEL AU |
|
BUK9609-55A,118Rochester Electronics |
MOSFET N-CH 55V 75A D2PAK |
|
NTLGF3402PT1GRochester Electronics |
MOSFET P-CH 20V 2.3A 6DFN |
|
FCP22N60N-F102Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 22A TO220-3 |
|
IPA70R360P7SXKSA1IR (Infineon Technologies) |
MOSFET N-CH 700V 12.5A TO220 |
|
IRFD310PBFVishay / Siliconix |
MOSFET N-CH 400V 350MA 4DIP |
|
HUFA76445P3Rochester Electronics |
MOSFET N-CH 60V 75A TO220-3 |
|
AON2290Alpha and Omega Semiconductor, Inc. |
MOSFET N CH 100V 4.5A DFN 2X2B |
|
DMT10H009LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V PWRDI5060 |
|
IRF141Rochester Electronics |
28A, 80V, 0.077OHM, N-CHANNEL PO |