English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ M2 |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 450mOhm @ 4.5A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 16 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 538 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 25W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I2PAKFP (TO-281) |
| 包/箱: | TO-262-3 Full Pack, I²Pak |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMNH6011LK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 55V 80A TO252 T&R |
|
STD10N60M6STMicroelectronics |
MOSFET N-CH 600V 6.4A DPAK |
|
RS1E240BNTBROHM Semiconductor |
MOSFET N-CH 30V 24A 8HSOP |
|
DMP2110UW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 2A SOT323 |
|
IMBG120R140M1HXTMA1IR (Infineon Technologies) |
TRANS SJT N-CH 1.2KV 18A TO263 |
|
BF2040E6814HTSARochester Electronics |
RF N-CHANNEL MOSFET |
|
FDME430NTRochester Electronics |
MOSFET N-CH 30V 6A MICROFET |
|
SIHF9640S-GE3Vishay / Siliconix |
MOSFET P-CH 200V 11A D2PAK |
|
STP32N65M5STMicroelectronics |
MOSFET N-CH 650V 24A TO220AB |
|
BSC029N025SGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
AOT15S65LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 15A TO220 |
|
2SK3700(F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 900V 5A TO3P |
|
PH6325L,115Rochester Electronics |
MOSFET N-CH 25V 78.7A LFPAK56 |
