English
简体中文
CAP CER 39PF 250V C0G/NP0 1206
MOSFET N-CH 600V 47A TO-247
SCREWDRIVER INSULATED CUSHION GR
LIMIT SWITCH
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TK30S06K3L(T6L1,NQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 30A DPAK |
|
SPS02N60C3Rochester Electronics |
MOSFET N-CH 650V 1.8A TO251-3 |
|
STW65N80K5STMicroelectronics |
MOSFET N-CH 800V 46A TO247 |
|
IXTQ10P50PWickmann / Littelfuse |
MOSFET P-CH 500V 10A TO3P |
|
SSM3K35CTC,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 250MA CST3C |
|
FDMA8884Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
BUK9Y58-75B,115Nexperia |
MOSFET N-CH 75V 20.73A LFPAK56 |
|
APT8014L2LLGRoving Networks / Microchip Technology |
MOSFET N-CH 800V 52A 264 MAX |
|
FQB11P06TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 11.4A D2PAK |
|
STF16N65M2STMicroelectronics |
MOSFET N-CH 650V 11A TO220FP |
|
SPD07N60C2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIRA14BDP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 21A/64A PPAK SO8 |
|
CSD17556Q5BTTexas Instruments |
MOSFET N-CH 30V 100A 8VSON |