English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 11.4A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 175mOhm @ 5.7A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 17 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 550 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.13W (Ta), 53W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D²PAK (TO-263AB) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STF16N65M2STMicroelectronics |
MOSFET N-CH 650V 11A TO220FP |
|
SPD07N60C2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIRA14BDP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 21A/64A PPAK SO8 |
|
CSD17556Q5BTTexas Instruments |
MOSFET N-CH 30V 100A 8VSON |
|
NVD3055-094T4GRochester Electronics |
12A, 60V, 0.094OHM, N-CHANNEL, |
|
STW21N150K5STMicroelectronics |
MOSFET N-CH 1500V 14A TO247 |
|
IPI147N12N3GAKSA1Rochester Electronics |
MOSFET N-CH 120V 56A TO262-3 |
|
PSMN025-80YLXNexperia |
MOSFET N-CH 80V 37A LFPAK56 |
|
IPB80P04P4L06ATMA1IR (Infineon Technologies) |
MOSFET P-CH 40V 80A TO263-3 |
|
SI7328DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 35A PPAK1212-8 |
|
CSD18502Q5BTexas Instruments |
MOSFET N-CH 40V 26A/100A 8VSON |
|
FDI33N25TURochester Electronics |
MOSFET N-CH 250V 33A I2PAK |
|
PSMN3R3-40YS,115Nexperia |
MOSFET N-CH 40V 100A LFPAK56 |
