类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 10.2A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 14.5mOhm @ 9.5A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 90 nC @ 10 V |
vgs (最大值): | ±25V |
输入电容 (ciss) (max) @ vds: | 4414 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 1W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | U-DFN2523-6 |
包/箱: | 6-PowerUDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PML340SN,118Rochester Electronics |
MOSFET N-CH 220V 7.3A DFN3333-8 |
|
CSD17578Q5ATTexas Instruments |
MOSFET N-CH 30V 25A 8VSON |
|
IPB65R225C7ATMA1Rochester Electronics |
MOSFET N-CH 650V 11A D2PAK |
|
FQPF5N20LRochester Electronics |
MOSFET N-CH 200V 3.5A TO220F |
|
STW120NF10STMicroelectronics |
MOSFET N-CH 100V 110A TO247-3 |
|
NTTFS4930NTWGRochester Electronics |
MOSFET N-CH 30V 4.5A/23A 8WDFN |
|
SQS482EN-T1_GE3Vishay / Siliconix |
MOSFET N-CH 30V 16A PPAK1212-8 |
|
APT10045B2LLGRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 23A T-MAX |
|
SIHB33N60ET1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 33A TO263 |
|
SIHFR1N60A-GE3Vishay / Siliconix |
MOSFET N-CH 600V 1.4A TO252AA |
|
STL210N4F7AGSTMicroelectronics |
MOSFET N-CH 40V 120A POWERFLAT |
|
APTM120U10SAGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 116A SP6 |
|
AOT2916LAlpha and Omega Semiconductor, Inc. |
MOSFET N CH 100V 5A TO220 |