English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ C7 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 11A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 225mOhm @ 4.8A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 240µA |
| 栅极电荷 (qg) (max) @ vgs: | 20 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 996 pF @ 400 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 63W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D²PAK (TO-263AB) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQPF5N20LRochester Electronics |
MOSFET N-CH 200V 3.5A TO220F |
|
STW120NF10STMicroelectronics |
MOSFET N-CH 100V 110A TO247-3 |
|
NTTFS4930NTWGRochester Electronics |
MOSFET N-CH 30V 4.5A/23A 8WDFN |
|
SQS482EN-T1_GE3Vishay / Siliconix |
MOSFET N-CH 30V 16A PPAK1212-8 |
|
APT10045B2LLGRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 23A T-MAX |
|
SIHB33N60ET1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 33A TO263 |
|
SIHFR1N60A-GE3Vishay / Siliconix |
MOSFET N-CH 600V 1.4A TO252AA |
|
STL210N4F7AGSTMicroelectronics |
MOSFET N-CH 40V 120A POWERFLAT |
|
APTM120U10SAGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 116A SP6 |
|
AOT2916LAlpha and Omega Semiconductor, Inc. |
MOSFET N CH 100V 5A TO220 |
|
FDD3580Rochester Electronics |
MOSFET N-CH 80V 7.7A DPAK |
|
APT30M70BVFRGRoving Networks / Microchip Technology |
MOSFET N-CH 300V 48A TO247 |
|
IXTP170N075T2Wickmann / Littelfuse |
MOSFET N-CH 75V 170A TO220AB |
