类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 16A (Tc) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | 290mOhm @ 8A, 10V |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | 18 nC @ 10 V |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | 988 pF @ 25 V |
场效应管特征: | Super Junction |
功耗(最大值): | 29.9W (Tc) |
工作温度: | 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220FP |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SQJ488EP-T1_BE3Vishay / Siliconix |
MOSFET N-CH 100V 42A PPAK SO-8 |
|
TSM3N90CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 900V 2.5A ITO220AB |
|
IRFB4115GPBFRochester Electronics |
HEXFET N-CHANNEL POWER MOSFET |
|
SI7463ADP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 40V 46A PPAK SO-8 |
|
IPP60R385CPXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 9A TO220-3 |
|
FDMS4435BZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 9A/18A 8PQFN |
|
NVHL020N120SC1Sanyo Semiconductor/ON Semiconductor |
SICFET N-CH 1200V 103A TO247-3 |
|
AUIRFSL3206Rochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
FQPF5P20Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 3 |
|
AONR36366Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 30A/34A 8DFN |
|
SSM6K217FE,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 1.8A ES6 |
|
CSD19503KCSTexas Instruments |
MOSFET N-CH 80V 100A TO220-3 |
|
FDMC86160Sanyo Semiconductor/ON Semiconductor |
MOSFET N CH 100V 9A POWER33 |