English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 150 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3A (Ta), 20A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 7V, 10V |
| rds on (max) @ id, vgs: | 94mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 4.6V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 20 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 985 pF @ 75 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta), 100W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-252, (D-Pak) |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFP360PBFVishay / Siliconix |
MOSFET N-CH 400V 23A TO247-3 |
|
IPP048N12N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 120V 100A TO220-3 |
|
PSMN1R7-30YL,115Nexperia |
MOSFET N-CH 30V 100A LFPAK56 |
|
TJ30S06M3L(T6L1,NQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 60V 30A DPAK |
|
APT8065BVFRGRoving Networks / Microchip Technology |
MOSFET N-CH 800V 13A TO247 |
|
IXFB90N85XWickmann / Littelfuse |
MOSFET N-CH 850V 90A PLUS264 |
|
IXTP50N20PWickmann / Littelfuse |
MOSFET N-CH 200V 50A TO220AB |
|
AOT1404LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 15A/220A TO220 |
|
IPD70R1K4CEAUMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 5.4A TO252-3 |
|
IPW65R041CFDFKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 68.5A TO247-3 |
|
AO6409Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 5.5A 6TSOP |
|
SQ2325ES-T1_GE3Vishay / Siliconix |
MOSFET P-CH 150V 840MA TO236 |
|
RQ5C035BCTCLROHM Semiconductor |
MOSFET P-CHANNEL 20V 3.5A TSMT3 |
