CAP CER 39000 PF 630V X7R 1210 P
CAP CER 82PF 630V C0G/NP0 2220
MOSFET N-CH 400V 3.1A DPAK
FERRITE 177OHM HINGED 19.10MM
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 400 V |
电流 - 连续漏极 (id) @ 25°c: | 3.1A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 1.8Ohm @ 1.9A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 20 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 350 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 2.5W (Ta), 42W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D-Pak |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NP110N055PUK-E1-AYRenesas Electronics America |
MOSFET N-CH 55V 110A TO263 |
|
STL31N65M5STMicroelectronics |
MOSFET N-CH 650V 15A PWRFLAT88 |
|
FQD16N15TMRochester Electronics |
MOSFET N-CH 150V 11.8A DPAK |
|
TN2640N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 400V 220MA TO92-3 |
|
YJL2102W-F2-0000HF |
N-CH MOSFET 20V 3A SOT-323 |
|
IRFB11N50APBFVishay / Siliconix |
MOSFET N-CH 500V 11A TO220AB |
|
NTGS3441T1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 1.65A 6TSOP |
|
NTTFS4929NTAGRochester Electronics |
MOSFET N-CH 30V 6.6A/34A 8WDFN |
|
IRFB3077PBFIR (Infineon Technologies) |
MOSFET N-CH 75V 120A TO220AB |
|
DN2540N5-GRoving Networks / Microchip Technology |
MOSFET N-CH 400V 500MA TO220-3 |
|
NTNS3A67PZT5GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V SOT883 |
|
FDBL9401-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 300A 8HPSOF |
|
NVD6416ANLT4G-VF01Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 19A DPAK-3 |