PFET, 75A I(D), 75V, 0.0056OHM,
CONN PLG HSG FMALE 21POS INLINE
类型 | 描述 |
---|---|
系列: | TrenchMOS™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 75 V |
电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 5.6mOhm @ 25A, 10V |
vgs(th) (最大值) @ id: | 4V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 91 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 7.446 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 300W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220AB |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AOTF600A70FLAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 700V 8.5A TO220F |
|
RZR020P01TLROHM Semiconductor |
MOSFET P-CH 12V 2A TSMT3 |
|
FDMS0310SRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
FQI10N20CTURochester Electronics |
MOSFET N-CH 200V 9.5A I2PAK |
|
BUK6240-75C,118Rochester Electronics |
MOSFET N-CH 75V 22A DPAK |
|
SSM3J36TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 330MA UFM |
|
IRFH8303TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 43A/100A 8PQFN |
|
IPD60R520CPRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDD2670Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 3.6A TO252 |
|
ZXMP10A17GQTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 100V 2.4A SOT223 |
|
IPB180N04S4LH0ATMA1Rochester Electronics |
MOSFET N-CH 40V 180A TO263-7-3 |
|
RSR020P05FRATLROHM Semiconductor |
MOSFET P-CH 45V 2A TSMT3 |
|
APT56M60B2Roving Networks / Microchip Technology |
MOSFET N-CH 600V 60A TO247 |