English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, OptiMOS®-P2 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 3.8mOhm @ 100A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 340µA |
| 栅极电荷 (qg) (max) @ vgs: | 205 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 14790 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 136W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TO263-3-2 |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RJK5033DPD-00#J2Renesas Electronics America |
MOSFET N-CH 500V 6A MP3A |
|
IXTY8N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 8A TO252 |
|
IRFR7540TRLPBFRochester Electronics |
HEXFET POWER MOSFET |
|
SUP40010EL-GE3Vishay / Siliconix |
MOSFET N-CH 40V 120A TO220AB |
|
DMN1008UFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 12V 12.2A 6UDFN |
|
DMN3900UFA-7BZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 550MA 3DFN |
|
IRFH5025TRPBFIR (Infineon Technologies) |
MOSFET N-CH 250V 3.8A 8PQFN |
|
BSC0702LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 100A SUPERSO8 |
|
SIHFR9024TR-GE3Vishay / Siliconix |
MOSFET P-CH 60V 8.8A DPAK |
|
TJ80S04M3L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 80A DPAK |
|
ES6U42T2RROHM Semiconductor |
MOSFET P-CH 20V 1A 6WEMT |
|
IRFS52N15DTRLPIR (Infineon Technologies) |
MOSFET N-CH 150V 51A D2PAK |
|
RT1E050RPTRROHM Semiconductor |
MOSFET P-CH 30V 5A 8TSST |
