类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDP038AN06A0-F102Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 80A TO220-3 |
|
SUM80090E-GE3Vishay / Siliconix |
MOSFET N-CH 150V 128A D2PAK |
|
STW3N170STMicroelectronics |
MOSFET N-CH 1700V 2.6A TO247-3 |
|
AUIRLR3105Rochester Electronics |
MOSFET N-CH 55V 25A DPAK |
|
NTMFS4927NCT1GRochester Electronics |
MOSFET N-CH 30V 7.9A/38A 5DFN |
|
APT10045JFLLRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 21A ISOTOP |
|
NVMFS5C426NWFAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 41A/235A 5DFN |
|
SSM3K44FS,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 100MA SSM |
|
SPU18P06PRochester Electronics |
MOSFET P-CH 60V 18.6A TO251-3 |
|
IRFR9020TRPBFVishay / Siliconix |
MOSFET P-CH 50V 9.9A DPAK |
|
IPP60R450E6XKSA1Rochester Electronics |
MOSFET N-CH 600V 9.2A TO220-3 |
|
BUK964R2-80E,118Nexperia |
MOSFET N-CH 80V 120A D2PAK |
|
IRFS7734PBFRochester Electronics |
MOSFET N-CH 75V 183A D2PAK |