类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, TrenchMOS™ |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 50A (Ta) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | 11.2mOhm @ 12A, 10V |
vgs(th) (最大值) @ id: | 2.8V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 33.9 nC @ 10 V |
vgs (最大值): | ±16V |
输入电容 (ciss) (max) @ vds: | 1900 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 80W |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | DPAK |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FQP17N08LRochester Electronics |
MOSFET N-CH 80V 16.5A TO220-3 |
|
NVD3055L170T4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 9A DPAK |
|
SI4143DY-T1-GE3Vishay / Siliconix |
MOSFET P-CHANNEL 30V 25.3A 8SO |
|
PMZB200UNE315Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IRFR3710ZTRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 42A DPAK |
|
FDMA7630Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11A 6MICROFET |
|
BUK9Y4R4-40E,115Nexperia |
MOSFET N-CH 40V 100A LFPAK56 |
|
IRFU024PBFVishay / Siliconix |
MOSFET N-CH 60V 14A TO251AA |
|
3N163 TO-72 4LLinear Integrated Systems, Inc. |
P-CHANNEL, SINGLE ENHANCEMENT MO |
|
IPT60R125G7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 20A 8HSOF |
|
SPD04P10PGRochester Electronics |
SPD04P10 - 20V-250V P-CHANNEL PO |
|
DMP32D4S-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 300MA SOT23 |
|
BUK954R4-80E,127Rochester Electronics |
MOSFET N-CH 80V 120A TO220AB |