English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ G7 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 20A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 125mOhm @ 6.4A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 320µA |
| 栅极电荷 (qg) (max) @ vgs: | 27 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1080 pF @ 400 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 120W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-HSOF-8-2 |
| 包/箱: | 8-PowerSFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SPD04P10PGRochester Electronics |
SPD04P10 - 20V-250V P-CHANNEL PO |
|
DMP32D4S-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 300MA SOT23 |
|
BUK954R4-80E,127Rochester Electronics |
MOSFET N-CH 80V 120A TO220AB |
|
IPP086N10N3GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 8 |
|
DI100N10PQDiotec Semiconductor |
MOSFET N-CH 100V 100A 8QFN |
|
PCP1403-TD-HSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 4.5A SOT89/PCP-1 |
|
AOTF13N50Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 13A TO220-3F |
|
IRF640STRRPBFVishay / Siliconix |
MOSFET N-CH 200V 18A TO263 |
|
TN0104N3-G-P014Roving Networks / Microchip Technology |
MOSFET N-CH 40V 450MA TO92-3 |
|
STWA65N60DM6STMicroelectronics |
MOSFET N-CH 600V 38A TO247 |
|
2SJ583LSRochester Electronics |
P-CHANNEL POWER MOSFET |
|
FDG327NSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 1.5A SC88 |
|
NVMTS0D6N04CTXGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 533A 8DFNW |
