English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 150 V |
| 电流 - 连续漏极 (id) @ 25°c: | 420mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 2.6Ohm @ 500mA, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 6.3 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | 1W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-363 |
| 包/箱: | 6-TSSOP, SC-88, SOT-363 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SPA20N65C3XKSA1Rochester Electronics |
MOSFET N-CH 650V 20.7A TO220-3 |
|
IPP034NE7N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 75V 100A TO220-3 |
|
FCPF600N60ZRochester Electronics |
MOSFET N-CH 600V 7.4A TO220F |
|
STB34NM60NSTMicroelectronics |
MOSFET N-CH 600V 29A D2PAK |
|
IPB100N10S305ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 100A TO263-3 |
|
AOUS66414Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 40A/92A ULTRASO8 |
|
NTE2931NTE Electronics, Inc. |
MOSFET N-CH 200V 12.8A TO3PML |
|
IPDD60R125G7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 20A HDSOP-10 |
|
NTMFS5H400NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 46A/330A 5DFN |
|
IPB22N03S4L15ATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 22A TO263-3 |
|
BUK7E2R3-40C,127Rochester Electronics |
MOSFET N-CH 40V 100A I2PAK |
|
ISL9N318AD3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
RSR010N10HZGTLROHM Semiconductor |
MOSFET N-CH 100V 1A TSMT3 |
