English
简体中文
CAP CER 10PF 4KV C0G/NP0 1808
MOSFET N-CH 200V 52A TO220-3
SWITCH TOGGLE SPDT 0.4VA 28V
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | UniFET™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 52A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 49mOhm @ 26A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 63 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 2900 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 357W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220-3 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPB80N04S3-04Rochester Electronics |
MOSFET N-CH 40V 80A TO263-3 |
|
FCH041N60FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 76A TO247-3 |
|
DMG2301LK-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 2.4A SOT23 |
|
SI8413DB-T1-E1Vishay / Siliconix |
MOSFET P-CH 20V 4.8A 4MICROFOOT |
|
AUIRFR120ZRochester Electronics |
MOSFET N-CH 100V 8.7A DPAK |
|
IPW60R280C6FKSA1Rochester Electronics |
PFET, 13.8A I(D), 600V, 0.28OHM, |
|
IRFL9110TRPBF-BE3Vishay / Siliconix |
MOSFET P-CH 100V 1.1A SOT223 |
|
SIHP17N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 15A TO220AB |
|
IXFK120N20PWickmann / Littelfuse |
MOSFET N-CH 200V 120A TO264AA |
|
IXFH15N100Q3Wickmann / Littelfuse |
MOSFET N-CH 1000V 15A TO247AD |
|
BUK654R8-40C,127Rochester Electronics |
MOSFET N-CH 40V 100A TO220AB |
|
PHB66NQ03LT,118Nexperia |
MOSFET N-CH 25V 66A D2PAK |
|
DMP2035UFDF-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 8.1A 6UDFN |