English
简体中文
MOSFET P-CH 12V 10A 8ECH
IC REG LINEAR 3.3V 750MA TO263-3
FERRITE CORE 2PC SET
SENSOR 75PSI 7/16-20-2B .5-4.5V
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 12 V |
| 电流 - 连续漏极 (id) @ 25°c: | 10A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 12.5mOhm @ 5A, 4.5V |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | 26 nC @ 4.5 V |
| vgs (最大值): | ±10V |
| 输入电容 (ciss) (max) @ vds: | 2300 pF @ 6 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.6W (Ta) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-ECH |
| 包/箱: | 8-SMD, Flat Lead |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQB5N90TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 900V 5.4A D2PAK |
|
IPN60R360PFD7SATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 10A SOT223 |
|
RJ1G08CGNTLLROHM Semiconductor |
MOSFET N-CH 40V 80A LPTL |
|
IPP60R125C6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 30A TO220-3 |
|
IPP085N06LGINRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SSM6K361NU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 3.5A 6UDFNB |
|
IRF640NSTRLPBFRochester Electronics |
HEXFET POWER MOSFET |
|
APT50M75JFLLRoving Networks / Microchip Technology |
MOSFET N-CH 500V 51A ISOTOP |
|
RJK0702DPN-E0#T2Rochester Electronics |
MOSFET N-CH 75V 90A TO220FP |
|
TK16J60W,S1VEToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
|
DMN1150UFB-7BZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 12V 1.41A 3DFN |
|
STH22N95K5-2AGSTMicroelectronics |
MOSFET |
|
IPB45P03P4L11ATMA1Rochester Electronics |
MOSFET P-CH 30V 45A TO263-3-2 |