类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, OptiMOS™ |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 45A (Tc) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | 11.1mOhm @ 45A, 10V |
vgs(th) (最大值) @ id: | 2V @ 85µA |
栅极电荷 (qg) (max) @ vgs: | 55 nC @ 10 V |
vgs (最大值): | +5V, -16V |
输入电容 (ciss) (max) @ vds: | 3770 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 58W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PG-TO263-3-2 |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRF7601TRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 5.7A MICRO8 |
|
SI4634DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 24.5A 8SO |
|
PMN15UN115Rochester Electronics |
SMALL SIGNAL FET |
|
SIHG25N60EFL-GE3Vishay / Siliconix |
MOSFET N-CH 600V 25A TO247AC |
|
BSP125H6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 120MA SOT223-4 |
|
TPH1110FNH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 250V 10A 8SOP |
|
2SK1400A-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
SQ7415AEN-T1_GE3Vishay / Siliconix |
MOSFET P-CH 60V 16A PPAK1212-8 |
|
STL40N75LF3STMicroelectronics |
MOSFET N-CH 75V 40A POWERFLAT |
|
FCH077N65F-F155Rochester Electronics |
MOSFET N-CH 650V 54A TO247 |
|
FDC645NSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 5.5A SUPERSOT6 |
|
TK8S06K3L(T6L1,NQ)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 8A DPAK |
|
DMT6007LFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 15A PWRDI3333 |