类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 6A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.8V, 4.5V |
rds on (max) @ id, vgs: | 24mOhm @ 6A, 4.5V |
vgs(th) (最大值) @ id: | 900mV @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 18.6 nC @ 4.5 V |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | 1150 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 610mW (Ta), 8.3W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-236AB |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
APT100MC120JCU2Roving Networks / Microchip Technology |
SICFET N-CH 1200V 143A SOT227 |
|
STW48N60M6-4STMicroelectronics |
MOSFET N-CH 600V 39A TO247-4 |
|
2SK4065-ERochester Electronics |
MOSFET N-CH 75V 100A SMP |
|
FDS6681ZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 20A 8SOIC |
|
PMZB670UPE,315Nexperia |
MOSFET P-CH 20V 680MA DFN1006B-3 |
|
AOT11N70Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 700V 11A TO220 |
|
SIR872DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 150V 53.7A PPAK SO-8 |
|
BSC090N03LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 13A/48A TDSON |
|
IXFH50N60XWickmann / Littelfuse |
MOSFET N-CH 600V 50A TO247 |
|
IPB021N06N3GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDD6688Rochester Electronics |
MOSFET N-CH 30V 84A DPAK |
|
IPB180P04P403ATMA1IR (Infineon Technologies) |
MOSFET P-CH 40V 180A TO263-7 |
|
NVMFS4C05NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 24.7A/116A 5DFN |