类型 | 描述 |
---|---|
系列: | HiPerFET™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 50A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 73mOhm @ 25A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 4mA |
栅极电荷 (qg) (max) @ vgs: | 116 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 4660 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 660W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-247 |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPB021N06N3GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDD6688Rochester Electronics |
MOSFET N-CH 30V 84A DPAK |
|
IPB180P04P403ATMA1IR (Infineon Technologies) |
MOSFET P-CH 40V 180A TO263-7 |
|
NVMFS4C05NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 24.7A/116A 5DFN |
|
TSM033NA04LCR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 40V 141A 8PDFN |
|
IRFU9310PBFVishay / Siliconix |
MOSFET P-CH 400V 1.8A TO251AA |
|
SI2304BDS-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 2.6A SOT23-3 |
|
AUIRF1405ZLRochester Electronics |
MOSFET N-CH 55V 150A TO262 |
|
IXTH26N60PWickmann / Littelfuse |
MOSFET N-CH 600V 26A TO247 |
|
BSC200P03LSGRochester Electronics |
P-CHANNEL POWER MOSFET |
|
CPH3348-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 12V 3A 3CPH |
|
STU4N52K3STMicroelectronics |
MOSFET N-CH 525V 2.5A IPAK |
|
STF10N60DM2STMicroelectronics |
MOSFET N-CH 600V 8A TO220FP |