English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | NexFET™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 25 V |
| 电流 - 连续漏极 (id) @ 25°c: | 60A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 3V, 8V |
| rds on (max) @ id, vgs: | 4mOhm @ 24A, 8V |
| vgs(th) (最大值) @ id: | 1.4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 8.4 nC @ 4.5 V |
| vgs (最大值): | +10V, -8V |
| 输入电容 (ciss) (max) @ vds: | 1300 pF @ 12.5 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-VSON-CLIP (3.3x3.3) |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MTB30P06VRochester Electronics |
P-CHANNEL POWER MOSFET |
|
IRF644PBFVishay / Siliconix |
MOSFET N-CH 250V 14A TO220AB |
|
IPW60R199CPFKSA1Rochester Electronics |
600V COOLMOS N-CHANNEL |
|
VN2460N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 600V 160MA TO92-3 |
|
STD2N80K5STMicroelectronics |
MOSFET N-CH 800V 2A DPAK |
|
ISL9N310AD3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
ZXMN6A08GQTCZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 3.8A SOT223 |
|
IRFR3806PBFRochester Electronics |
MOSFET N-CH 60V 43A DPAK |
|
ECH8419-TL-HRochester Electronics |
MOSFET N-CH 35V 9A 8ECH |
|
IRF3704SPBFRochester Electronics |
MOSFET N-CH 20V 77A D2PAK |
|
IPD90N04S402ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 90A TO252-3 |
|
IPU07N03LARochester Electronics |
MOSFET N-CH 25V 30A TO251-3 |
|
STP3N80K5STMicroelectronics |
MOSFET N-CH 800V 2.5A TO220 |
