English
简体中文
XTAL OSC VCXO 125.0000MHZ LVPECL
MOSFET N-CH 550V 16A TO220AB
CMC 38.5MH 0.6A 0.71OHM WIDE IMP
RF ANT 161MHZ WHIP STR NMO BASE
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ V |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 550 V |
| 电流 - 连续漏极 (id) @ 25°c: | 16A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 192mOhm @ 8A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 31 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 1260 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 110W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PSMN4R1-30YLC,115Rochester Electronics |
MOSFET N-CH 30V 92A LFPAK56 |
|
APT34M60SRoving Networks / Microchip Technology |
MOSFET N-CH 600V 36A D3PAK |
|
IPW60R041C6FKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 77.5A TO247-3 |
|
RS1E260ATTB1ROHM Semiconductor |
MOSFET P-CH 30V 26A/80A 8HSOP |
|
RJK0354DSP-00#J0Renesas Electronics America |
MOSFET N-CH 30V 16A 8SOP |
|
AUIRFR1018ERochester Electronics |
PFET, 56A I(D), 60V, 0.0084OHM, |
|
NTD78N03R-035Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
STL40N10F7STMicroelectronics |
MOSFET N-CH 100V 40A POWERFLAT |
|
FCH104N60FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 37A TO247-3 |
|
HUFA76419S3SRochester Electronics |
MOSFET N-CH 60V 29A D2PAK |
|
PMGD175XNE115Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SIRA16DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 16A PPAK SO-8 |
|
STD11NM60NDSTMicroelectronics |
MOSFET N-CH 600V 10A DPAK |