English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6.5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 250mOhm @ 6.5A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 270µA |
| 栅极电荷 (qg) (max) @ vgs: | 13.8 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 420 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 28W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TO252-3-313 |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDBL86062-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 300A 8HPSOF |
|
STH80N10LF7-2AGSTMicroelectronics |
MOSFET N-CH 100V 80A H2PAK-2 |
|
RM150N30LT2Rectron USA |
MOSFET N-CH 30V 150A TO220-3 |
|
IRFBA90N20DPBFRochester Electronics |
IRFBA90N20 - SMPS HEXFET |
|
IXFJ20N85XWickmann / Littelfuse |
MOSFET N-CH 850V 9.5A ISO TO247 |
|
PMN40UPE,115Rochester Electronics |
MOSFET P-CH 20V 4.7A 6TSOP |
|
AUIRFZ44ZSRochester Electronics |
MOSFET N-CH 55V 51A D2PAK |
|
FQP13N50Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 12.5A TO220-3 |
|
BSC360N15NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 150V 33A 8TDSON |
|
IPW65R660CFDFKSA1Rochester Electronics |
MOSFET N-CH 700V 6A TO247-3 |
|
IRFD320PBFVishay / Siliconix |
MOSFET N-CH 400V 490MA 4DIP |
|
IXFN26N120PWickmann / Littelfuse |
MOSFET N-CH 1200V 23A SOT-227B |
|
SIHLL110TR-GE3Vishay / Siliconix |
MOSFET N-CH 100V 1.5A SOT223 |
