RES SMD 2.8K OHM 1% 1/4W 1206
RES 23.7K OHM 1/20W 1% AXIAL
MOSFET N-CH 600V 18A ITO220AB
MICA
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 18A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 190mOhm @ 6A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 31 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 1273 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 33.8W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | ITO-220AB |
包/箱: | TO-220-3 Full Pack, Isolated Tab |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RQ6A045APTCRROHM Semiconductor |
MOSFET P-CH 12V 4.5A TSMT6 |
|
PMCM4401VPE084Rochester Electronics |
PMCM4401 SMALL SIGNAL FET |
|
IPB180N04S401ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 180A TO263-7 |
|
VMO1200-01FWickmann / Littelfuse |
MOSFET N-CH 100V 1220A Y3-LI |
|
FCH041N60F-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 76A TO247-3 |
|
EFC4612R-S-TRSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 24V 6A EFCP |
|
IRL6342TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 9.9A 8SO |
|
RZM002P02T2LROHM Semiconductor |
MOSFET P-CH 20V 200MA VMT3 |
|
NTD78N03R-001Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQA16N50Rochester Electronics |
MOSFET N-CH 500V 16A TO3P |
|
SFT1423-S-TL-ERochester Electronics |
MOSFET N-CH 500V 2A TP-FA |
|
TK5A65D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 5A TO220SIS |
|
BUK9277-55A,118Nexperia |
MOSFET N-CH 55V 18A DPAK |