English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9.2A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4V, 5V |
| rds on (max) @ id, vgs: | 270mOhm @ 5.5A, 5V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 12 nC @ 5 V |
| vgs (最大值): | ±10V |
| 输入电容 (ciss) (max) @ vds: | 490 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 60W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTTFS4943NTAGRochester Electronics |
MOSFET N-CH 30V 8A/41A 8WDFN |
|
BUK9M11-40HXNexperia |
MOSFET N-CH 40V 35A LFPAK33 |
|
SQJ860EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
|
IRFBC30STRLPBFVishay / Siliconix |
MOSFET N-CH 600V 3.6A D2PAK |
|
BUK9510-100B,127Rochester Electronics |
MOSFET N-CH 100V 75A TO220AB |
|
IXTP20N65XMWickmann / Littelfuse |
MOSFET N-CH 650V 9A TO220 |
|
FQPF3N50CRochester Electronics |
MOSFET N-CH 500V 3A TO220F |
|
TSM060N03ECP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 30V 70A TO252 |
|
FQI32N12V2TURochester Electronics |
MOSFET N-CH 120V 32A I2PAK |
|
IRF840BPBF-BE3Vishay / Siliconix |
MOSFET N-CH 500V 8.7A TO220AB |
|
RM8N650LDRectron USA |
MOSFET N-CHANNEL 650V 8A TO252-2 |
|
AUIRLU3110ZRochester Electronics |
MOSFET N-CH 100V 42A IPAK |
|
SI7884BDP-T1-E3Vishay / Siliconix |
MOSFET N-CH 40V 58A PPAK SO-8 |
