English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI2307-TPMicro Commercial Components (MCC) |
MOSFET P-CH 30V 2.7A SOT23 |
|
NVMFS6H801NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 23A/157A 5DFN |
|
FDPF4D5N10CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 128A TO220F |
|
TK40E10N1,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 100V 90A TO220 |
|
NTMFS5C460NLT1GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
STI13NM60NSTMicroelectronics |
MOSFET N-CH 600V 11A I2PAK |
|
MCH3476-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 2A SC70FL/MCPH3 |
|
FQA34N25Rochester Electronics |
MOSFET N-CH 250V 34A TO3P |
|
IPB100N04S2L03ATMA2Rochester Electronics |
MOSFET N-CH 40V 100A TO263-3-2 |
|
STL45N65M5STMicroelectronics |
MOSFET N-CH 650V 22.5A PWRFLAT |
|
IXFX320N17T2Wickmann / Littelfuse |
MOSFET N-CH 170V 320A PLUS247-3 |
|
CSD19538Q3ATTexas Instruments |
MOSFET N-CH 100V 15A 8VSON |
|
2N7002BKS/DG/B2115Rochester Electronics |
N-CHANNEL SMALL SIGNAL MOSFET |
