English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 57A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 23mOhm @ 28.5A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 110 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 3300 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 160W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220-3 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDC8878Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 8A/8A SUPERSOT6 |
|
STD11N65M2STMicroelectronics |
MOSFET N-CH 650V 7A DPAK |
|
IPA50R280CEXKSA2IR (Infineon Technologies) |
MOSFET N-CH 500V 7.5A TO220 |
|
MTDF1N03HDR2Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
PMCM650VNERochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
BSZ146N10LS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 40A TSDSON |
|
IRLZ24PBFVishay / Siliconix |
MOSFET N-CH 60V 17A TO220AB |
|
SIHP28N65E-GE3Vishay / Siliconix |
MOSFET N-CH 650V 29A TO220AB |
|
CSD17505Q5ATexas Instruments |
MOSFET N-CH 30V 24A/100A 8VSON |
|
NTD3817N-35GRochester Electronics |
MOSFET N-CH 16V 7.6A/34.5A IPAK |
|
TPC8065-H,LQ(SToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 13A 8SOP |
|
TSM60NB190CF C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 18A ITO220S |
|
NTMFS4847NAT1GRochester Electronics |
MOSFET N-CH 30V 11.5A/85A 5DFN |
