类型 | 描述 |
---|---|
系列: | CoolMOS™ C7 |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 109A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 17mOhm @ 58.2A, 10V |
vgs(th) (最大值) @ id: | 4V @ 2.91mA |
栅极电荷 (qg) (max) @ vgs: | 240 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 9890 pF @ 400 V |
场效应管特征: | - |
功耗(最大值): | 446W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO247-4-1 |
包/箱: | TO-247-4 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
ON5520215Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
J176_D74ZRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
IXTA60N20T-TRLWickmann / Littelfuse |
MOSFET N-CH 200V 60A TO263 |
|
SI7342DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 9A PPAK SO-8 |
|
SI7812DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 75V 16A PPAK1212-8 |
|
SISS12DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 37.5A/60A PPAK |
|
BSS84AKVLNexperia |
MOSFET P-CH 50V 180MA TO236AB |
|
IXFN50N80Q2Wickmann / Littelfuse |
MOSFET N-CH 800V 50A SOT-227B |
|
DMT6009LFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 11A PWRDI3333 |
|
FDMS0309AS |
MOSFET N-CH 30V 21A/49A 8PQFN |
|
DMN3033LSN-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 6A SC59-3 |
|
2SK3299-S-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF1404PBFIR (Infineon Technologies) |
MOSFET N-CH 40V 202A TO220AB |