类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, TrenchMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 5V, 10V |
rds on (max) @ id, vgs: | 5mOhm @ 25A, 10V |
vgs(th) (最大值) @ id: | 2V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 31 nC @ 5 V |
vgs (最大值): | ±15V |
输入电容 (ciss) (max) @ vds: | 3430 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 167W (Tc) |
工作温度: | -55°C ~ 185°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | DPAK |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BUK9Y29-40E,115Nexperia |
MOSFET N-CH 40V 25A LFPAK56 |
|
TSM900N06CH X0GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 60V 11A TO251 |
|
IRFIB5N65APBFVishay / Siliconix |
MOSFET N-CH 650V 5.1A TO220-3 |
|
TK5A55D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 550V 5A TO220SIS |
|
PHK04P02T,518Nexperia |
MOSFET P-CH 16V 4.66A 8SO |
|
PMV250EPEARNexperia |
MOSFET P-CH 40V 1.5A TO236AB |
|
IXFK100N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 100A TO264 |
|
IXFH100N30X3Wickmann / Littelfuse |
MOSFET N-CH 300V 100A TO247 |
|
SI4425FDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 12.7/18.3A 8SOIC |
|
IRFML8244TRPBFIR (Infineon Technologies) |
MOSFET N-CH 25V 5.8A SOT23 |
|
PMZB950UPEYLNexperia |
MOSFET P-CH 20V 500MA DFN1006B-3 |
|
AO3407AAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 4.3A SOT23-3L |
|
SIHF080N60E-GE3Vishay / Siliconix |
E SERIES POWER MOSFET TO-220 FUL |