English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PolarHV™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 30A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 200mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 70 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 4150 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 460W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247 (IXTH) |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
2N7002PW,115Nexperia |
MOSFET N-CH 60V 310MA SOT323 |
|
IRFR210PBF-BE3Vishay / Siliconix |
MOSFET N-CH 200V 2.6A DPAK |
|
CSD25501F3Texas Instruments |
MOSFET P-CH 20V 3.6A 3LGA |
|
5LN01SP-ACRochester Electronics |
N-CHANNEL MOSFET |
|
IPP60R120C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 19A TO220-3 |
|
SIA466EDJ-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 25A PPAK SC70-6 |
|
IXFK32N100XWickmann / Littelfuse |
MOSFET N-CH 1000V 32A TO264 |
|
RM130N200HDRectron USA |
MOSFET N-CH 200V 132A TO263-2 |
|
IXTH20N60Wickmann / Littelfuse |
MOSFET N-CH 600V 20A TO247 |
|
IPB80P03P4L04ATMA2IR (Infineon Technologies) |
MOSFET P-CH 30V 80A TO263-3 |
|
IAUZ40N06S5N050ATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 40A TSDSON-8-33 |
|
IRF840LCPBFVishay / Siliconix |
MOSFET N-CH 500V 8A TO220AB |
|
IPP100N08S2L07AKSA1IR (Infineon Technologies) |
MOSFET N-CH 75V 100A TO220-3 |
