English
简体中文
MOSFET N-CH 550V 20A D2PAK
SCR MOD ISO DUAL 800V 700A
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 550 V |
| 电流 - 连续漏极 (id) @ 25°c: | 20A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 250mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 56 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1480 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 192W (Tc) |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPB60R099P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 31A D2PAK |
|
HP4410DYTRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SISA14DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 20A PPAK1212-8 |
|
STFU13N65M2STMicroelectronics |
MOSFET N-CH 650V 10A TO220FP |
|
FQB9N50TMRochester Electronics |
MOSFET N-CH 500V 9A D2PAK |
|
FQU3N60TURochester Electronics |
MOSFET N-CH 600V 2.4A IPAK |
|
NDS351ANSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 1.4A SUPERSOT3 |
|
FDB016N04AL7Rochester Electronics |
MOSFET N-CH 40V 160A TO263-7 |
|
BUK7620-100A,118Rochester Electronics |
TRANSISTOR >30MHZ |
|
DMN30H4D1S-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 300V 430MA SOT23 |
|
SPB04N60S5ATMA1Rochester Electronics |
MOSFET N-CH 600V 4.5A TO263-3 |
|
HUFA75344S3Rochester Electronics |
MOSFET N-CH 55V 75A I2PAK |
|
FDS8882Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 9A 8SOIC |