类型 | 描述 |
---|---|
系列: | eGaN® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | GaNFET (Gallium Nitride) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 48A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 5V |
rds on (max) @ id, vgs: | 4mOhm @ 30A, 5V |
vgs(th) (最大值) @ id: | 2.5V @ 11mA |
栅极电荷 (qg) (max) @ vgs: | 15 nC @ 5 V |
vgs (最大值): | +6V, -4V |
输入电容 (ciss) (max) @ vds: | 1530 pF @ 50 V |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | Die |
包/箱: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMP2036UVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 6A TSOT26 |
|
XP233N05013R-GTorex Semiconductor Ltd. |
MOSFET N-CH 30V 500MA SOT323-3 |
|
NTMS4807NR2GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 9.1A 8SOIC |
|
STW57N65M5-4STMicroelectronics |
MOSFET N-CH 650V 42A TO247-4L |
|
BSC240N12NS3GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
PSMN085-150K,518-NEXRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 3 |
|
NX7002BKM315Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
FCU360N65S3R0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V IPAK |
|
IRFB3207PBFIR (Infineon Technologies) |
MOSFET N-CH 75V 170A TO220AB |
|
SIA471DJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 12.9A/30.3A PPAK |
|
IRLZ24NPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 18A TO220AB |
|
IXTH75N10L2Wickmann / Littelfuse |
MOSFET N-CH 100V 75A TO247 |
|
NVTFS4823NTAGRochester Electronics |
30 V, 30 A, 10.5 MILLI OHM, SING |