English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | STripFET™ III |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 24 V |
| 电流 - 连续漏极 (id) @ 25°c: | 60A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 5V, 10V |
| rds on (max) @ id, vgs: | 8mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 1.8V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 22 nC @ 5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2050 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 80W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTK3142PT1GRochester Electronics |
MOSFET P-CH 20V 215MA SOT723 |
|
STD30N10F7STMicroelectronics |
MOSFET N-CH 100V 32A DPAK |
|
IPP65R600E6XKSA1Rochester Electronics |
600V COOLMOS POWER TRANSISTOR |
|
SIRC16DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 60A PPAK SO-8 |
|
RAF040P01TCLROHM Semiconductor |
MOSFET P-CH 12V 4A TUMT3 |
|
BUK7S1R0-40HJNexperia |
MOSFET N-CH 40V 325A LFPAK88 |
|
IPA65R190CFDXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 17.5A TO220 |
|
TPN2R304PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 80A 8TSON |
|
FDC602PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 5.5A SUPERSOT6 |
|
PMN280ENEAXNexperia |
MOSFET N-CH 100V 1.2A 6TSOP |
|
SI4436DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 60V 8A 8SO |
|
BSP92PL6327Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
IXTH130N20TWickmann / Littelfuse |
MOSFET N-CH 200V 130A TO247 |
