MOSFET N-CH 30V 10A/40A 8TSDSON
4" PRE-CRIMP A2040N BROWN
3/8 HEX X 2.00 LENGTH
EXT O= .850,L= 2.00,W= .055
类型 | 描述 |
---|---|
系列: | OptiMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 10A (Ta), 40A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 9.1mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 23 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1700 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 2.1W (Ta), 30W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PG-TSDSON-8 |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SIHG33N65E-GE3Vishay / Siliconix |
MOSFET N-CH 650V 32.4A TO247AC |
|
SI4848DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 150V 2.7A 8SO |
|
BSS123NH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 190MA SOT23-3 |
|
IXFH26N50P3Wickmann / Littelfuse |
MOSFET N-CH 500V 26A TO247AD |
|
NTD2955-1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 12A IPAK |
|
IPB65R190CFDAATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 17.5A D2PAK |
|
AON7522EAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 21A/34A 8DFN |
|
FDP26N40Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 26A TO220-3 |
|
ZXM64P02XTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 3.5A 8MSOP |
|
TPH6R004PL,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 87A/49A 8SOP |
|
IRFR1018EPBFRochester Electronics |
MOSFET N-CH 60V 56A DPAK |
|
IPB180N03S4L-H0Rochester Electronics |
IPB180N03 - 20V-40V N-CHANNEL AU |
|
FDMT800120DCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 120V 20A 8DLCOOL88 |