English
简体中文
MOSFET P-CHANNEL 20V 12A 6PQFN
IC FLASH 512KBIT SPI/QUAD 8SOIC
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 12A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.5V, 4.5V |
| rds on (max) @ id, vgs: | 13mOhm @ 2.5A, 4.5V |
| vgs(th) (最大值) @ id: | 1.4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 39 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 4383 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.4W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 6-PQFN (2x2) |
| 包/箱: | 6-PowerWDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STB46N60M6STMicroelectronics |
MOSFET N-CH 600V 36A D2PAK |
|
TSM3N90CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CH 900V 2.5A TO252 |
|
IXTQ170N10PWickmann / Littelfuse |
MOSFET N-CH 100V 170A TO3P |
|
IXTK32P60PWickmann / Littelfuse |
MOSFET P-CH 600V 32A TO264 |
|
NTD3055-150Rochester Electronics |
MOSFET N-CH 60V 9A DPAK |
|
IPA60R230P6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 16.8A TO220-FP |
|
PSMN7R5-60YLXNexperia |
MOSFET N-CH 60V 86A LFPAK56 |
|
DMN2011UFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 14.2A 6UDFN |
|
R6020ANJTLROHM Semiconductor |
MOSFET N-CH 600V 20A LPTS |
|
UJ3C120150K3SUnitedSiC |
SICFET N-CH 1200V 18.4A TO247-3 |
|
FCP16N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 16A TO220-3 |
|
AOV11S60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 650MA/8A 4DFN |
|
STU10N60M2STMicroelectronics |
MOSFET N-CH 600V 7.5A IPAK |