MOSFET N-CH 600V 11A TO262
DIODE ZENER 7.5V 1W DO41
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 11A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 700mOhm @ 5.5A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 37 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 1990 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 272W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-262 |
包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PMV31XN,215Rochester Electronics |
MOSFET N-CH 20V 5.9A TO236AB |
|
IRFBC40APBFVishay / Siliconix |
MOSFET N-CH 600V 6.2A TO220AB |
|
IPA65R400CEXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V TO220 |
|
SIHB120N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 25A D2PAK |
|
NTD4809NH-35GRochester Electronics |
MOSFET N-CH 30V 9.6A/58A IPAK |
|
FDD8453LZ-F085Rochester Electronics |
MOSFET N-CH 40V 50A DPAK |
|
PMN27UN,135Rochester Electronics |
MOSFET N-CH 20V 5.7A 6TSOP |
|
SQR40020ER_GE3Vishay / Siliconix |
MOSFET N-CH 40V 100A TO252 REV |
|
NVMS5P02R2GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.95A 8SOIC |
|
BSS214NWH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 20V 1.5A SOT323-3 |
|
IRF7820TRPBFIR (Infineon Technologies) |
MOSFET N CH 200V 3.7A 8-SO |
|
NTP2955GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 2.4A TO220AB |
|
IRFP340PBFVishay / Siliconix |
MOSFET N-CH 400V 11A TO247-3 |