类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 11A (Ta), 61A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 15mOhm @ 10A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 67 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 4004 pF @ 20 V |
场效应管特征: | - |
功耗(最大值): | 1.6W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerDI5060-8 |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SI2333DDS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 6A SOT23-3 |
|
STP80N6F6STMicroelectronics |
MOSFET N-CH 60V 110A TO220 |
|
FQU2N80TURochester Electronics |
MOSFET N-CH 800V 1.8A IPAK |
|
TPH11003NL,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 30V 32A 8SOP |
|
IRL3714ZSPBFRochester Electronics |
MOSFET N-CH 20V 36A D2PAK |
|
NVD5865NLT4GRochester Electronics |
MOSFET N-CH 60V 10A/46A DPAK |
|
IXFP130N10T2Wickmann / Littelfuse |
MOSFET N-CH 100V 130A TO220AB |
|
TK12Q60W,S1VQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 600V 11.5A IPAK |
|
IPD25N06S240ATMA1Rochester Electronics |
MOSFET N-CH 55V 29A TO252-3 |
|
IPA041N04NGXKSA1IR (Infineon Technologies) |
MOSFET N-CH 40V 70A TO220-FP |
|
DMP1022UFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 12V 9.5A 6UDFN |
|
DMP22D6UT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 430MA SOT523 |
|
AOWF10N65Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 10A TO262F |